SSM3J338R,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

6A

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

1W Ta

Number of Terminations :

3

Vgs(th) (Max) @ Id :

1V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 8V

Package / Case :

SOT-23-3 Flat Leads

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

17.6m Ω @ 6A, 8V

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

19.5nC @ 4.5V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0279Ohm

Published :

2015

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

6A Ta

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

12V

Mount :

Surface Mount

Series :

U-MOSVII

JESD-30 Code :

R-PDSO-F3

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 6V

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Operating Temperature :

150°C TJ

Drain Current-Max (Abs) (ID) :

6A

DS Breakdown Voltage-Min :

12V

Vgs (Max) :

±10V

Mounting Type :

Surface Mount

FET Type :

P-Channel