SSM3J332R,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Height :

880μm

Vgs(th) (Max) @ Id :

1.2V @ 1mA

FET Type :

P-Channel

Threshold Voltage :

-500mV

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 15V

Transistor Application :

SWITCHING

Reach Compliance Code :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

6A

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

12V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 10V

Operating Mode :

ENHANCEMENT MODE

Series :

U-MOSVI

Current - Continuous Drain (Id) @ 25°C :

6A Ta

Power Dissipation-Max :

1W Ta

Terminal Position :

Dual

Transistor Element Material :

SILICON

Number of Pins :

3

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

42m Ω @ 5A, 10V

Mount :

Surface Mount

Power Dissipation :

1W

Drain to Source Voltage (Vdss) :

30V

Max Junction Temperature (Tj) :

150°C

Factory Lead Time :

16 Weeks

Package / Case :

SOT-23-3 Flat Leads

Drain to Source Breakdown Voltage :

-22V

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

15 ns

Published :

2010

Vgs (Max) :

±12V

Turn-Off Delay Time :

75 ns

RoHS Status :

RoHS Compliant

Operating Temperature :

150°C TJ

Continuous Drain Current (ID) :

-6A

Number of Terminations :

3

Drain-source On Resistance-Max :

0.042Ohm