SSM3J331R,LF
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- Mfr.Part #
- SSM3J331R,LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SOT-23-3 Flat Leads
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 4A SOT23F
- Stock
- 53,149
- In Stock ：
- 53,149
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 1W Ta
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Series :
- U-MOSVI
- Current - Continuous Drain (Id) @ 25°C :
- 4A Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±8V
- Continuous Drain Current (ID) :
- 4A
- Rds On (Max) @ Id, Vgs :
- 55m Ω @ 3A, 4.5V
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- Vgs(th) (Max) @ Id :
- 1V @ 1mA
- Drain to Source Breakdown Voltage :
- -20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 630pF @ 10V
- FET Type :
- P-Channel
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 1W
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 8V
- ECCN Code :
- EAR99
- Factory Lead Time :
- 16 Weeks
- RoHS Status :
- RoHS Compliant
- Published :
- 2004
- Package / Case :
- SOT-23-3 Flat Leads
- Drain to Source Voltage (Vdss) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 10.4nC @ 4.5V
- Datasheets
- SSM3J331R,LF
P-Channel Tape & Reel (TR) 55m Ω @ 3A, 4.5V ±8V 630pF @ 10V 10.4nC @ 4.5V 20V SOT-23-3 Flat Leads
SSM3J331R,LF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 630pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 4A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-20V. And this device has -20V drain to source breakdown voltage.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (1.5V 4.5V), this device helps reduce its overall power consumption.
SSM3J331R,LF Features
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of -20V voltage
a 20V drain to source voltage (Vdss)
SSM3J331R,LF Applications
There are a lot of Toshiba Semiconductor and Storage
SSM3J331R,LF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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