SSM3J328R,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1V @ 1mA

Packaging :

Digi-Reel®

Turn On Delay Time :

32 ns

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Published :

2009

Terminal Position :

Dual

Operating Temperature :

150°C TJ

Pulsed Drain Current-Max (IDM) :

24A

Drain Current-Max (Abs) (ID) :

6A

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

840pF @ 10V

Power Dissipation-Max :

1W Ta

Drain-source On Resistance-Max :

0.0298Ohm

Vgs (Max) :

±8V

Factory Lead Time :

16 Weeks

RoHS Status :

RoHS Compliant

Number of Channels :

1

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

-20V

Current - Continuous Drain (Id) @ 25°C :

6A Ta

Radiation Hardening :

No

Power Dissipation :

2W

Series :

U-MOSVI

Rds On (Max) @ Id, Vgs :

29.8m Ω @ 3A, 4.5V

Number of Elements :

1

Package / Case :

SOT-23-3 Flat Leads

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Element Configuration :

Single

Turn-Off Delay Time :

107 ns

Gate to Source Voltage (Vgs) :

8V

Gate Charge (Qg) (Max) @ Vgs :

12.8nC @ 4.5V

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

20V