SSM3J325F,LF
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- Mfr.Part #
- SSM3J325F,LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 2A S-MINI
- Stock
- 21,084
- In Stock ：
- 21,084
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- -20V
- Drain to Source Voltage (Vdss) :
- 20V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Series :
- U-MOSVI
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 1A, 4.5V
- RoHS Status :
- RoHS Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 2A Ta
- Published :
- 2014
- Gate Charge (Qg) (Max) @ Vgs :
- 4.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 270pF @ 10V
- Mount :
- Surface Mount
- FET Type :
- P-Channel
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 8V
- Vgs (Max) :
- ±8V
- Power Dissipation-Max :
- 600mW Ta
- Capacitance :
- 270pF
- Packaging :
- Cut Tape (CT)
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 12 Weeks
- Continuous Drain Current (ID) :
- 2A
- Element Configuration :
- Single
- Datasheets
- SSM3J325F,LF
P-Channel Cut Tape (CT) 150m Ω @ 1A, 4.5V ±8V 270pF @ 10V 4.6nC @ 4.5V 20V TO-236-3, SC-59, SOT-23-3
SSM3J325F,LF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 270pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2A amps.In this device, the drain-source breakdown voltage is -20V and VGS=-20V, so the drain-source breakdown voltage is -20V in this case.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (1.5V 4.5V).
SSM3J325F,LF Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of -20V voltage
a 20V drain to source voltage (Vdss)
SSM3J325F,LF Applications
There are a lot of Toshiba Semiconductor and Storage
SSM3J325F,LF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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