SSH70N10A

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Mfr.Part #
SSH70N10A
Manufacturer
onsemi
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 100V 70A TO3PN
Stock
214
In Stock :
214

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
24ns
Turn-Off Delay Time :
112 ns
Continuous Drain Current (ID) :
70A
Current - Continuous Drain (Id) @ 25°C :
70A Tc
Drain to Source Breakdown Voltage :
100V
Element Configuration :
Single
Power Dissipation-Max :
300W Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Packaging :
Tube
FET Type :
N-Channel
Current :
70A
Lead Free :
Lead Free
Package / Case :
TO-3P-3, SC-65-3
Nominal Vgs :
4 V
Published :
1997
Number of Pins :
3
Mount :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
195nC @ 10V
Rds On (Max) @ Id, Vgs :
23m Ω @ 35A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Operating Temperature :
-55°C~175°C TJ
Power Dissipation :
300W
Fall Time (Typ) :
84 ns
RoHS Status :
RoHS Compliant
Gate to Source Voltage (Vgs) :
20V
Mounting Type :
Through Hole
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
4870pF @ 25V
Radiation Hardening :
No
Voltage :
100V
Datasheets
SSH70N10A
Introducing Transistors - FETs, MOSFETs - Single onsemi SSH70N10A from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3P-3, SC-65-3, Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Voltage:100V, SSH70N10A pinout, SSH70N10A datasheet PDF, SSH70N10A amp .Beyond Transistors - FETs, MOSFETs - Single onsemi SSH70N10A ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SSH70N10A


N-Channel Tube 23m Ω @ 35A, 10V 4870pF @ 25V 195nC @ 10V TO-3P-3, SC-65-3

SSH70N10A Description


The ON Semiconductor SSH70N10A is an advanced power MOSFET that can have a significant impact on improving the efficiency of the Voltage-Regulator Modules.



SSH70N10A Features


  • Avalanche Rugged Technology

  • Rugged Gate Oxide Technology

  • Lower Input Capacitance

  • Improved Gate Charge

  • Extended Safe Operating Area

  • 175 Operating Temperature

  • Lower Leakage Current : 10 A (Max.) @ VDS = 100V

  • Lower RDS(ON) : 0.018 (Typ.)


SSH70N10A Applications


  • lower voltage circuits

  • Automotive electronics area



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