SQW61N65EF-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Polarity :

N-Channel

Base Product Number :

SQW61

Brand :

Vishay / Siliconix

Polarity :

N

Power Dissipation (Max) :

625W (Tc)

Configuration :

Single

Channel Type :

N

Number of Channels :

1 Channel

Drain to Source Voltage (Vdss) :

650 V

Package Type :

TO-247AD

Minimum Operating Temperature :

- 55 C

Maximum Operating Temperature :

+ 175 C

Rds On (Max) @ Id, Vgs :

52mOhm @ 32A, 10V

Mounting Type :

Through Hole

Number of Elements :

1

Number of Elements per Chip :

1

Gate Charge (Qg) (Max) @ Vgs :

344 nC @ 10 V

Drain-Source On-Volt :

650(V)

Pin Count :

3

Rise Time :

107 ns

Product Type :

MOSFET

FET Type :

N-Channel

Operating Temperature :

-55°C ~ 175°C (TJ)

RoHS :

Details

Mounting Style :

Through Hole

Operating Temperature Classification :

Military

Operating Temp Range :

-55C to 175C

Packaging :

Rail/Tube

Input Capacitance (Ciss) (Max) @ Vds :

7379 pF @ 100 V

Vgs(th) (Max) @ Id :

4V @ 250µA

Qualification :

AEC-Q101

Subcategory :

MOSFETs

Continuous Drain Current :

62(A)

Power Dissipation :

625(W)

Transistor Type :

1 N-Channel

Continuous Drain Current Id :

62A

Package :

Tube

Package / Case :

TO-247-3

Product Category :

MOSFET

Gate-Source Voltage (Max) :

±30(V)

Type :

Power MOSFET

Manufacturer :

Vishay

Product Status :

Active

Current - Continuous Drain (Id) @ 25°C :

62A (Tc)

Product :

MOSFET

FET Feature :

-

Channel Mode :

Enhancement

Supplier Device Package :

TO-247AD

Series :

Automotive, AEC-Q101, E

Rad Hardened :

No

Vgs (Max) :

±30V