SQW33N65EF-GE3

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Mfr.Part #
SQW33N65EF-GE3
Manufacturer
Vishay
Package / Case
TO-247-3
Datasheet
Download
Description
E SERIES POWER MOSFET WITH FAST
Stock
519
In Stock :
519

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Type :
1 N-Channel
Package / Case :
TO-247-3
Tradename :
TrenchFET
Packaging :
Bulk
Rise Time :
77 ns
Number of Elements per Chip :
2
Product Status :
Active
Configuration :
Single
Pin Count :
3
Input Capacitance (Ciss) (Max) @ Vds :
3972 pF @ 100 V
Package :
Bulk
Operating Temperature :
-55°C ~ 175°C (TJ)
Minimum Operating Temperature :
- 55 C
Power Dissipation (Max) :
375W (Tc)
Current - Continuous Drain (Id) @ 25°C :
34A (Tc)
FET Type :
N-Channel
Drive Voltage (Max Rds On, Min Rds On) :
10V
Package Type :
TO-247AD
Brand :
Vishay / Siliconix
Vgs(th) (Max) @ Id :
4V @ 250µA
Channel Mode :
Enhancement
Subcategory :
MOSFETs
Vgs (Max) :
±30V
Channel Type :
N
Mounting Style :
Through Hole
FET Feature :
-
Drain to Source Voltage (Vdss) :
650 V
RoHS :
Details
Product Type :
MOSFET
Supplier Device Package :
TO-247AD
Mounting Type :
Through Hole
Rds On (Max) @ Id, Vgs :
109mOhm @ 16.5A, 10V
Transistor Polarity :
N-Channel
Power Dissipation :
375
Series :
Automotive, AEC-Q101, E
Manufacturer :
Vishay
Continuous Drain Current Id :
34
Qualification :
AEC-Q101
Maximum Operating Temperature :
+ 175 C
Gate Charge (Qg) (Max) @ Vgs :
173 nC @ 10 V
Number of Channels :
2 Channel
Product Category :
MOSFET
Datasheets
SQW33N65EF-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SQW33N65EF-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Operating Temperature:-55°C ~ 175°C (TJ), Mounting Type:Through Hole, Number of Channels:2 Channel, SQW33N65EF-GE3 pinout, SQW33N65EF-GE3 datasheet PDF, SQW33N65EF-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SQW33N65EF-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SQW33N65EF-GE3


N-Channel Bulk 109mOhm @ 16.5A, 10V ±30V 3972 pF @ 100 V 173 nC @ 10 V 650 V TO-247-3

SQW33N65EF-GE3 Overview


The maximum input capacitance of this device is 3972 pF @ 100 V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 650 V in order to operate.

SQW33N65EF-GE3 Features


a 650 V drain to source voltage (Vdss)


SQW33N65EF-GE3 Applications


There are a lot of Vishay Siliconix
SQW33N65EF-GE3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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