SQP60N06-15_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

56A

Series :

Automotive, AEC-Q101, TrenchFET®

JESD-30 Code :

R-PSFM-T3

Drain to Source Voltage (Vdss) :

60V

Number of Terminations :

3

Reach Compliance Code :

Unknown

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Pulsed Drain Current-Max (IDM) :

190A

DS Breakdown Voltage-Min :

60V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

107W Tc

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

2480pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

Avalanche Energy Rating (Eas) :

42 mJ

Drain-source On Resistance-Max :

0.015Ohm

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

15m Ω @ 30A, 10V

Packaging :

Cut Tape (CT)

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB