SQP50N06-09L_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Unknown

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

JEDEC-95 Code :

TO-220AB

Avalanche Energy Rating (Eas) :

115 mJ

Power Dissipation-Max :

136W Tc

Drain-source On Resistance-Max :

0.009Ohm

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

60V

Terminal Position :

Single

Vgs(th) (Max) @ Id :

2.5V @ 250μA

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

9m Ω @ 20A, 10V

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

60V

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

200A

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

3065pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

12 Weeks

Drain Current-Max (Abs) (ID) :

50A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Series :

Automotive, AEC-Q101, TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Vgs (Max) :

±20V