SQP100P06-9M3L_GE3
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- Mfr.Part #
- SQP100P06-9M3L_GE3
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 100A TO220AB
- Stock
- 1,968
- In Stock ：
- 1,968
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- P-Channel
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 187W Tc
- Supplier Device Package :
- TO-220AB
- Rds On (Max) @ Id, Vgs :
- 9.3mOhm @ 30A, 10V
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Package / Case :
- TO-220-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Series :
- Automotive, AEC-Q101, TrenchFET®
- Drain to Source Voltage (Vdss) :
- 60V
- Packaging :
- Cut Tape (CT)
- Factory Lead Time :
- 12 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 12010pF @ 25V
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 300nC @ 10V
- Datasheets
- SQP100P06-9M3L_GE3
P-Channel Cut Tape (CT) 9.3mOhm @ 30A, 10V ±20V 12010pF @ 25V 300nC @ 10V 60V TO-220-3
SQP100P06-9M3L_GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 12010pF @ 25V maximal input capacitance.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SQP100P06-9M3L_GE3 Features
a 60V drain to source voltage (Vdss)
SQP100P06-9M3L_GE3 Applications
There are a lot of Vishay Siliconix
SQP100P06-9M3L_GE3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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