SQM90142E_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

5.08mm

Number of Channels :

1

FET Type :

N-Channel

Number of Terminations :

2

Number of Elements :

1

Continuous Drain Current (ID) :

95A

Drain to Source Breakdown Voltage :

200V

Turn-Off Delay Time :

39 ns

Current - Continuous Drain (Id) @ 25°C :

95A Tc

Mounting Type :

Surface Mount

Max Junction Temperature (Tj) :

175°C

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

12 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

Unknown

Power Dissipation-Max :

375W Tc

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

205 mJ

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 25V

Surface Mount :

yes

Terminal Position :

Single

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

15.3m Ω @ 20A, 10V

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 10V

Turn On Delay Time :

17 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

Automotive, AEC-Q101, TrenchFET®

Power Dissipation :

375W