SQM70060EL_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

75A Tc

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

180A

Reach Compliance Code :

Unknown

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

5500pF @ 25V

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Series :

Automotive, AEC-Q101, TrenchFET®

Drain-source On Resistance-Max :

0.0059Ohm

Avalanche Energy Rating (Eas) :

180 mJ

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Drain to Source Voltage (Vdss) :

100V

Terminal Form :

Gull wing

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

5.9m Ω @ 30A, 10V

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

100V

Drain Current-Max (Abs) (ID) :

67A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

166W Tc

Terminal Position :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Surface Mount :

yes