SQM60030E_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

12000pF @ 25V

Avalanche Energy Rating (Eas) :

245 mJ

Drain Current-Max (Abs) (ID) :

120A

DS Breakdown Voltage-Min :

80V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 30A, 10V

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Series :

Automotive, AEC-Q101, TrenchFET®

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

80V

Drain-source On Resistance-Max :

0.0032Ohm

FET Type :

N-Channel

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Pulsed Drain Current-Max (IDM) :

250A

Gate Charge (Qg) (Max) @ Vgs :

165nC @ 10V

Factory Lead Time :

14 Weeks

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

375W Tc

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

Unknown