SQM50N04-4M1_GE3

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Mfr.Part #
SQM50N04-4M1_GE3
Manufacturer
Vishay
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 40V 50A TO263
Stock
15
In Stock :
15

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Turn On Delay Time :
12 ns
Min Operating Temperature :
-55°C
REACH SVHC :
Unknown
FET Type :
N-Channel
Max Operating Temperature :
175°C
Turn-Off Delay Time :
35 ns
Rds On (Max) @ Id, Vgs :
4.1mOhm @ 30A, 10V
Continuous Drain Current (ID) :
50A
Weight :
1.946308g
Number of Channels :
1
Published :
2015
Fall Time (Typ) :
9 ns
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
105nC @ 10V
Vgs (Max) :
±20V
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Rds On Max :
4.1 mΩ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
20V
Current - Continuous Drain (Id) @ 25°C :
50A Tc
Packaging :
Tape and Reel (TR)
Operating Temperature :
-55°C~175°C TJ
Factory Lead Time :
12 Weeks
Drain to Source Voltage (Vdss) :
40V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Series :
TrenchFET®
Input Capacitance (Ciss) (Max) @ Vds :
6715pF @ 25V
Drain to Source Resistance :
4.1mOhm
Threshold Voltage :
3V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mount :
Surface Mount
Radiation Hardening :
No
Power Dissipation-Max :
150W Tc
Mounting Type :
Surface Mount
Supplier Device Package :
TO-263 (D2Pak)
Number of Pins :
3
Input Capacitance :
6.715nF
Rise Time :
5ns
Datasheets
SQM50N04-4M1_GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SQM50N04-4M1_GE3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, Number of Pins:3, SQM50N04-4M1_GE3 pinout, SQM50N04-4M1_GE3 datasheet PDF, SQM50N04-4M1_GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SQM50N04-4M1_GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SQM50N04-4M1_GE3


N-Channel Tape & Reel (TR) 4.1mOhm @ 30A, 10V ±20V 6715pF @ 25V 105nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SQM50N04-4M1_GE3 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6715pF @ 25V.This device conducts a continuous drain current (ID) of 50A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 35 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 4.1mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

SQM50N04-4M1_GE3 Features


a continuous drain current (ID) of 50A
the turn-off delay time is 35 ns
single MOSFETs transistor is 4.1mOhm
a threshold voltage of 3V
a 40V drain to source voltage (Vdss)


SQM50N04-4M1_GE3 Applications


There are a lot of Vishay Siliconix
SQM50N04-4M1_GE3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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