SQM50N04-4M1_GE3
- Mfr.Part #
- SQM50N04-4M1_GE3
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 50A TO263
- Stock
- 15
- In Stock :
- 15
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 12 ns
- Min Operating Temperature :
- -55°C
- REACH SVHC :
- Unknown
- FET Type :
- N-Channel
- Max Operating Temperature :
- 175°C
- Turn-Off Delay Time :
- 35 ns
- Rds On (Max) @ Id, Vgs :
- 4.1mOhm @ 30A, 10V
- Continuous Drain Current (ID) :
- 50A
- Weight :
- 1.946308g
- Number of Channels :
- 1
- Published :
- 2015
- Fall Time (Typ) :
- 9 ns
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 105nC @ 10V
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Rds On Max :
- 4.1 mΩ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~175°C TJ
- Factory Lead Time :
- 12 Weeks
- Drain to Source Voltage (Vdss) :
- 40V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Series :
- TrenchFET®
- Input Capacitance (Ciss) (Max) @ Vds :
- 6715pF @ 25V
- Drain to Source Resistance :
- 4.1mOhm
- Threshold Voltage :
- 3V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 150W Tc
- Mounting Type :
- Surface Mount
- Supplier Device Package :
- TO-263 (D2Pak)
- Number of Pins :
- 3
- Input Capacitance :
- 6.715nF
- Rise Time :
- 5ns
- Datasheets
- SQM50N04-4M1_GE3

N-Channel Tape & Reel (TR) 4.1mOhm @ 30A, 10V ±20V 6715pF @ 25V 105nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SQM50N04-4M1_GE3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6715pF @ 25V.This device conducts a continuous drain current (ID) of 50A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 35 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 4.1mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
SQM50N04-4M1_GE3 Features
a continuous drain current (ID) of 50A
the turn-off delay time is 35 ns
single MOSFETs transistor is 4.1mOhm
a threshold voltage of 3V
a 40V drain to source voltage (Vdss)
SQM50N04-4M1_GE3 Applications
There are a lot of Vishay Siliconix
SQM50N04-4M1_GE3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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