SQD25N15-52_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Supplier Device Package :

TO-252, (D-Pak)

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Rise Time :

11ns

Current - Continuous Drain (Id) @ 25°C :

25A Tc

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

52mOhm @ 15A, 10V

Element Configuration :

Single

Number of Pins :

3

Continuous Drain Current (ID) :

25A

Length :

6.73mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

6 ns

Weight :

1.437803g

Power Dissipation-Max :

107W Tc

Power Dissipation :

107W

Width :

6.22mm

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

REACH SVHC :

Unknown

Turn On Delay Time :

11 ns

Factory Lead Time :

12 Weeks

Height :

2.39mm

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Turn-Off Delay Time :

20 ns

Mounting Type :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Published :

2015

RoHS Status :

ROHS3 Compliant

Series :

Automotive, AEC-Q101, TrenchFET®

Mount :

Surface Mount

Max Operating Temperature :

175°C

Threshold Voltage :

3V

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Input Capacitance :

2.2nF

Drain to Source Resistance :

52mOhm

Rds On Max :

52 mΩ

Gate to Source Voltage (Vgs) :

20V

Contact Plating :

Tin

Number of Elements :

1

Drain to Source Voltage (Vdss) :

150V

Number of Channels :

1