SQA470EJ-T1_GE3

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Mfr.Part #
SQA470EJ-T1_GE3
Manufacturer
Vishay
Package / Case
PowerPAK® SC-70-6
Datasheet
Download
Description
MOSFET N-CH 30V 2.25A PPAK SC70
Stock
2,988
In Stock :
2,988

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~175°C TJ
Manufacturer Package Identifier :
C-07431-SINGLE
Power Dissipation-Max :
13.6W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Operating Temperature :
175°C
Gate Charge (Qg) (Max) @ Vgs :
6nC @ 4.5V
Vgs(th) (Max) @ Id :
1.1V @ 250μA
Max Junction Temperature (Tj) :
175°C
Continuous Drain Current (ID) :
2.25A
Mounting Type :
Surface Mount
Drain to Source Resistance :
38mOhm
Current - Continuous Drain (Id) @ 25°C :
2.25A Tc
Power Dissipation :
13.6W
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
440pF @ 20V
Turn On Delay Time :
7.3 ns
Package / Case :
PowerPAK® SC-70-6
Series :
Automotive, AEC-Q101, TrenchFET®
RoHS Status :
ROHS3 Compliant
Gate to Source Voltage (Vgs) :
12V
Rds On (Max) @ Id, Vgs :
65mOhm @ 3A, 4.5V
Factory Lead Time :
12 Weeks
Drain to Source Breakdown Voltage :
30V
Min Operating Temperature :
-55°C
Supplier Device Package :
PowerPAK® SC-70-6 Single
Number of Channels :
1
Turn-Off Delay Time :
21 ns
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
30V
Height :
850μm
Packaging :
Tape and Reel (TR)
Datasheets
SQA470EJ-T1_GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SQA470EJ-T1_GE3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Package / Case:PowerPAK® SC-70-6, Number of Channels:1, SQA470EJ-T1_GE3 pinout, SQA470EJ-T1_GE3 datasheet PDF, SQA470EJ-T1_GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SQA470EJ-T1_GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SQA470EJ-T1_GE3


N-Channel Tape & Reel (TR) 65mOhm @ 3A, 4.5V ±12V 440pF @ 20V 6nC @ 4.5V 30V PowerPAK® SC-70-6

SQA470EJ-T1_GE3 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 440pF @ 20V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 21 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 38mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 7.3 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 12VV.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (2.5V 4.5V).

SQA470EJ-T1_GE3 Features


a continuous drain current (ID) of 2.25A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 38mOhm
a 30V drain to source voltage (Vdss)


SQA470EJ-T1_GE3 Applications


There are a lot of Vishay Siliconix
SQA470EJ-T1_GE3 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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