SQ4153EY-T1_GE3
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- Mfr.Part #
- SQ4153EY-T1_GE3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CHANNEL 12V 25A 8SOIC
- Stock
- 4,780
- In Stock ：
- 4,780
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Terminal Form :
- Gull wing
- Turn On Delay Time :
- 31 ns
- Vgs (Max) :
- ±8V
- Number of Terminations :
- 8
- Vgs(th) (Max) @ Id :
- 900mV @ 250μA
- Mounting Type :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.00832Ohm
- Packaging :
- Tape and Reel (TR)
- Height :
- 1.75mm
- Gate to Source Voltage (Vgs) :
- 8V
- Surface Mount :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 25A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- -12V
- JESD-30 Code :
- R-PDSO-G8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 12 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 11000pF @ 6V
- Gate Charge (Qg) (Max) @ Vgs :
- 151nC @ 4.5V
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation-Max :
- 7.1W Tc
- Reach Compliance Code :
- Unknown
- FET Type :
- P-Channel
- Terminal Position :
- Dual
- Feedback Cap-Max (Crss) :
- 3600 pF
- Series :
- Automotive, AEC-Q101, TrenchFET®
- Continuous Drain Current (ID) :
- -25A
- Power Dissipation :
- 7.1W
- ECCN Code :
- EAR99
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Max Junction Temperature (Tj) :
- 175°C
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- Non-RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Turn-Off Delay Time :
- 310 ns
- Rds On (Max) @ Id, Vgs :
- 8.32m Ω @ 14A, 4.5V
- Number of Channels :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 12V
- Datasheets
- SQ4153EY-T1_GE3
P-Channel Tape & Reel (TR) 8.32m Ω @ 14A, 4.5V ±8V 11000pF @ 6V 151nC @ 4.5V 12V 8-SOIC (0.154, 3.90mm Width)
SQ4153EY-T1_GE3 Overview
A device's maximum input capacitance is 11000pF @ 6V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is -25A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-12V, and this device has a drain-to-source breakdown voltage of -12V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 310 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 31 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.To operate this transistor, you need to apply a 12V drain to source voltage (Vdss).This device uses no drive voltage (1.8V 4.5V) to reduce its overall power consumption.
SQ4153EY-T1_GE3 Features
a continuous drain current (ID) of -25A
a drain-to-source breakdown voltage of -12V voltage
the turn-off delay time is 310 ns
a 12V drain to source voltage (Vdss)
SQ4153EY-T1_GE3 Applications
There are a lot of Vishay Siliconix
SQ4153EY-T1_GE3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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