SQ1420EEH-T1-GE3
- Mfr.Part #
- SQ1420EEH-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 1.6A SC70-6
- Stock
- 21,418
- In Stock :
- 21,418
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 1.2A, 10V
- Number of Terminations :
- 6
- Feedback Cap-Max (Crss) :
- 30 pF
- Terminal Form :
- Gull wing
- REACH SVHC :
- Unknown
- Power Dissipation :
- 3.3W
- Current - Continuous Drain (Id) @ 25°C :
- 1.6A Tc
- Continuous Drain Current (ID) :
- 1.6A
- Threshold Voltage :
- 2V
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Rise Time :
- 21ns
- Number of Pins :
- 6
- Series :
- TrenchFET®
- Mount :
- Surface Mount
- Pin Count :
- 6
- Drain to Source Breakdown Voltage :
- 60V
- Packaging :
- Digi-Reel®
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Published :
- 2012
- Max Power Dissipation :
- 3.3W
- Gate Charge (Qg) (Max) @ Vgs :
- 4nC @ 4.5V
- Min Operating Temperature :
- -55°C
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Operating Temperature :
- 175°C
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 215pF @ 25V
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 8 ns
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 12 ns
- Fall Time (Typ) :
- 7 ns
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Datasheets
- SQ1420EEH-T1-GE3
N-Channel Digi-Reel® 140m Ω @ 1.2A, 10V 215pF @ 25V 4nC @ 4.5V 6-TSSOP, SC-88, SOT-363
SQ1420EEH-T1-GE3 Overview
The maximum input capacitance of this device is 215pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 1.6A.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 8 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 2V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.
SQ1420EEH-T1-GE3 Features
a continuous drain current (ID) of 1.6A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 8 ns
a threshold voltage of 2V
SQ1420EEH-T1-GE3 Applications
There are a lot of Vishay Siliconix
SQ1420EEH-T1-GE3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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