SPW55N80C3FKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Transistor Application :

SWITCHING

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

288nC @ 10V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

500W Tc

Pin Count :

3

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

JESD-609 Code :

e3

Published :

2008

Series :

CoolMOS™ C3

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

85m Ω @ 32.6A, 10V

Vgs(th) (Max) @ Id :

3.9V @ 3.3mA

Pbfree Code :

yes

Factory Lead Time :

18 Weeks

Drain to Source Voltage (Vdss) :

800V

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.085Ohm

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

54.9A Tc

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

800V

Pulsed Drain Current-Max (IDM) :

150A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-247-3

ECCN Code :

EAR99

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

2150 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

7520pF @ 100V