SPU30P06P

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

JESD-30 Code :

R-PSIP-T3

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

1535pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

120A

Power Dissipation :

125W

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.075Ohm

Avalanche Energy Rating (Eas) :

250 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED

Rise Time :

11ns

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Vgs(th) (Max) @ Id :

4V @ 1.7mA

Turn-Off Delay Time :

30 ns

Published :

2002

Drain to Source Breakdown Voltage :

-60V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

ECCN Code :

EAR99

Number of Terminations :

3

Current Rating :

-30A

Drain to Source Voltage (Vdss) :

60V

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

20 ns

Power Dissipation-Max :

125W Tc

Reach Compliance Code :

Unknown

Lead Free :

Lead Free

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Continuous Drain Current (ID) :

30A

Voltage - Rated DC :

-60V

Case Connection :

DRAIN

Series :

SIPMOS®

Rds On (Max) @ Id, Vgs :

75m Ω @ 21.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

30A Tc

RoHS Status :

RoHS Compliant