SPU18P06P

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

150 mJ

Current - Continuous Drain (Id) @ 25°C :

18.6A Tc

JESD-30 Code :

R-PSIP-T3

Current Rating :

-18.6A

Number of Elements :

1

Max Operating Temperature :

175°C

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Mounting Type :

Through Hole

Series :

SIPMOS®

Gate to Source Voltage (Vgs) :

20V

Pin Count :

3

Lead Free :

Lead Free

Mount :

Through Hole

Voltage - Rated DC :

-60V

Vgs (Max) :

±20V

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

74.4A

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

-60V

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

JESD-609 Code :

e3

Fall Time (Typ) :

11 ns

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Min Operating Temperature :

-55°C

Turn-Off Delay Time :

24.5 ns

Max Power Dissipation :

80W

ECCN Code :

EAR99

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.13Ohm

Rds On (Max) @ Id, Vgs :

130m Ω @ 13.2A, 10V

Drain to Source Voltage (Vdss) :

60V

Rise Time :

5.8ns

Additional Feature :

AVALANCHE RATED

Terminal Finish :

MATTE TIN

Published :

2008

Continuous Drain Current (ID) :

18.6A

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

80W