SPP70N10L

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

250W

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

16m Ω @ 50A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

250 ns

Power Dissipation-Max :

250W Tc

Lead Free :

Contains Lead

ECCN Code :

EAR99

Series :

SIPMOS®

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Pin Count :

3

Drain-source On Resistance-Max :

0.025Ohm

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Input Capacitance (Ciss) (Max) @ Vds :

4540pF @ 25V

Pulsed Drain Current-Max (IDM) :

280A

Package / Case :

TO-220-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Avalanche Energy Rating (Eas) :

700 mJ

Fall Time (Typ) :

95 ns

Continuous Drain Current (ID) :

70A

JESD-609 Code :

e3

Vgs (Max) :

±20V

Published :

1999

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET Type :

N-Channel

Current Rating :

70A

Packaging :

Tube

Vgs(th) (Max) @ Id :

2V @ 2mA

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

Voltage - Rated DC :

100V

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Rise Time :

250ns

Mount :

Through Hole

Element Configuration :

Single

RoHS Status :

Non-RoHS Compliant

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

100V

Operating Temperature :

-55°C~175°C TJ