SPI47N10
- Mfr.Part #
- SPI47N10
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 47A TO262-3
- Stock
- 46,363
- In Stock :
- 46,363
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 188A
- Additional Feature :
- AVALANCHE RATED
- Pin Count :
- 3
- Published :
- 2002
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- Lead Free :
- Contains Lead
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Continuous Drain Current (ID) :
- 47A
- Number of Terminations :
- 3
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PSIP-T3
- Reach Compliance Code :
- Unknown
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 33A, 10V
- Avalanche Energy Rating (Eas) :
- 400 mJ
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- Non-RoHS Compliant
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 2mA
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 175W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 105nC @ 10V
- Series :
- SIPMOS®
- Current Rating :
- 47A
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 100V
- Drain-source On Resistance-Max :
- 0.033Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 47A Tc
- Datasheets
- SPI47N10

N-Channel Tube 33m Ω @ 33A, 10V ±20V 2500pF @ 25V 105nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
SPI47N10 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 400 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2500pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 47A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 188A.By using drive voltage (10V), this device helps reduce its overall power consumption.
SPI47N10 Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 47A
based on its rated peak drain current 188A.
SPI47N10 Applications
There are a lot of Infineon Technologies
SPI47N10 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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