SPI47N10

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Mfr.Part #
SPI47N10
Manufacturer
Infineon Technologies
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Datasheet
Download
Description
MOSFET N-CH 100V 47A TO262-3
Stock
46,363
In Stock :
46,363

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Pulsed Drain Current-Max (IDM) :
188A
Additional Feature :
AVALANCHE RATED
Pin Count :
3
Published :
2002
Input Capacitance (Ciss) (Max) @ Vds :
2500pF @ 25V
Lead Free :
Contains Lead
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~175°C TJ
Continuous Drain Current (ID) :
47A
Number of Terminations :
3
Vgs (Max) :
±20V
JESD-30 Code :
R-PSIP-T3
Reach Compliance Code :
Unknown
Mounting Type :
Through Hole
Qualification Status :
Not Qualified
Mount :
Through Hole
Rds On (Max) @ Id, Vgs :
33m Ω @ 33A, 10V
Avalanche Energy Rating (Eas) :
400 mJ
Package / Case :
TO-262-3 Long Leads, I2Pak, TO-262AA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Packaging :
Tube
Configuration :
SINGLE WITH BUILT-IN DIODE
RoHS Status :
Non-RoHS Compliant
Number of Elements :
1
FET Type :
N-Channel
Terminal Position :
Single
Vgs(th) (Max) @ Id :
4V @ 2mA
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max :
175W Tc
Gate Charge (Qg) (Max) @ Vgs :
105nC @ 10V
Series :
SIPMOS®
Current Rating :
47A
ECCN Code :
EAR99
Transistor Element Material :
SILICON
Voltage - Rated DC :
100V
Drain-source On Resistance-Max :
0.033Ohm
Current - Continuous Drain (Id) @ 25°C :
47A Tc
Datasheets
SPI47N10
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies SPI47N10 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-262-3 Long Leads, I2Pak, TO-262AA, SPI47N10 pinout, SPI47N10 datasheet PDF, SPI47N10 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies SPI47N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies SPI47N10


N-Channel Tube 33m Ω @ 33A, 10V ±20V 2500pF @ 25V 105nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA

SPI47N10 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 400 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2500pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 47A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 188A.By using drive voltage (10V), this device helps reduce its overall power consumption.

SPI47N10 Features


the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 47A
based on its rated peak drain current 188A.


SPI47N10 Applications


There are a lot of Infineon Technologies
SPI47N10 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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