SPI35N10

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

44m Ω @ 26.4A, 10V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

FET Type :

N-Channel

Power Dissipation-Max :

150W Tc

Rise Time :

63ns

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Voltage - Rated DC :

100V

Pin Count :

3

Number of Terminations :

3

Turn-Off Delay Time :

39 ns

Drain to Source Breakdown Voltage :

100V

Additional Feature :

AVALANCHE RATED

Current Rating :

35A

Element Configuration :

Single

Qualification Status :

Not Qualified

Series :

SIPMOS®

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

245 mJ

Published :

2002

JESD-30 Code :

R-PSIP-T3

Fall Time (Typ) :

23 ns

Lead Free :

Lead Free

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

140A

Input Capacitance (Ciss) (Max) @ Vds :

1570pF @ 25V

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

150W

Drain-source On Resistance-Max :

0.044Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 83μA

Continuous Drain Current (ID) :

35A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Through Hole