SPD22N08S2L-50
- Mfr.Part #
- SPD22N08S2L-50
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 25A TO252-3
- Stock
- 21,965
- In Stock :
- 21,965
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Contains Lead
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Published :
- 2003
- Rds On (Max) @ Id, Vgs :
- 50m Ω @ 11A, 10V
- Power Dissipation-Max :
- 75W Tc
- Number of Terminations :
- 2
- Drain Current-Max (Abs) (ID) :
- 18A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Current Rating :
- 25A
- Voltage - Rated DC :
- 75V
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Pin Count :
- 4
- Packaging :
- Tape and Reel (TR)
- Series :
- OptiMOS™
- JESD-30 Code :
- R-PSSO-G2
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 94 mJ
- Terminal Finish :
- MATTE TIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 850pF @ 25V
- JESD-609 Code :
- e3
- Reach Compliance Code :
- Unknown
- Pulsed Drain Current-Max (IDM) :
- 100A
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 25A Tc
- ECCN Code :
- EAR99
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mount :
- Surface Mount
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 25A
- Drain-source On Resistance-Max :
- 0.065Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 10V
- Vgs(th) (Max) @ Id :
- 2V @ 31μA
- Datasheets
- SPD22N08S2L-50

N-Channel Tape & Reel (TR) 50m Ω @ 11A, 10V ±20V 850pF @ 25V 33nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
SPD22N08S2L-50 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 94 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 850pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 25A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 18A.Peak drain current is 100A, which is the maximum pulsed drain current.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
SPD22N08S2L-50 Features
the avalanche energy rating (Eas) is 94 mJ
a continuous drain current (ID) of 25A
based on its rated peak drain current 100A.
SPD22N08S2L-50 Applications
There are a lot of Infineon Technologies
SPD22N08S2L-50 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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