SPB47N10

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

47A Tc

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 25V

Series :

SIPMOS®

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2002

Rds On (Max) @ Id, Vgs :

33m Ω @ 33A, 10V

FET Type :

N-Channel

Continuous Drain Current (ID) :

47A

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

Additional Feature :

AVALANCHE RATED

Pin Count :

4

Drain-source On Resistance-Max :

0.033Ohm

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

188A

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 2mA

Terminal Finish :

MATTE TIN

ECCN Code :

EAR99

Terminal Position :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Qualification Status :

Not Qualified

Current Rating :

47A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

JESD-609 Code :

e3

Voltage - Rated DC :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

175W Tc

Number of Elements :

1

RoHS Status :

Non-RoHS Compliant

Lead Free :

Contains Lead

Mounting Type :

Surface Mount

Reach Compliance Code :

Unknown

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

400 mJ

Transistor Element Material :

SILICON