SPA08N80C3XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

650m Ω @ 5.1A, 10V

Transistor Application :

SWITCHING

Current Rating :

8A

Pbfree Code :

yes

Turn-Off Delay Time :

65 ns

Number of Elements :

1

Series :

CoolMOS™

Drain Current-Max (Abs) (ID) :

8A

Package / Case :

TO-220-3 Full Pack

Rise Time :

15ns

Drain-source On Resistance-Max :

0.65Ohm

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Voltage - Rated DC :

800V

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

25 ns

Continuous Drain Current (ID) :

8A

Number of Terminations :

3

Fall Time (Typ) :

7 ns

JEDEC-95 Code :

TO-220AB

Max Dual Supply Voltage :

800V

Additional Feature :

AVALANCHE RATED, HIGH VOLTAGE

Pulsed Drain Current-Max (IDM) :

24A

Factory Lead Time :

18 Weeks

Pin Count :

3

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Halogen Free :

Halogen Free

Vgs (Max) :

±20V

Number of Pins :

3

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 100V

Vgs(th) (Max) @ Id :

3.9V @ 470μA

Case Connection :

Isolated

Published :

2005

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

40W

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Mount :

Through Hole

Power Dissipation-Max :

40W Tc