SPA08N50C3XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

600m Ω @ 4.6A, 10V

Mounting Type :

Through Hole

Package / Case :

TO-220-3 Full Pack

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 25V

Pulsed Drain Current-Max (IDM) :

22.8A

FET Type :

N-Channel

Series :

CoolMOS™

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Drain-source On Resistance-Max :

0.6Ohm

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Terminal Position :

Single

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

500V

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

230 mJ

Reach Compliance Code :

Compliant

Factory Lead Time :

8 Weeks

Transistor Element Material :

SILICON

Published :

2005

Surface Mount :

No

RoHS Status :

RoHS Compliant

Case Connection :

Isolated

Additional Feature :

AVALANCHE RATED

JEDEC-95 Code :

TO-220AB

Qualification Status :

Not Qualified

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

7.6A Tc

Drain to Source Voltage (Vdss) :

560V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

7.6A

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3.9V @ 350µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

32W Tc