SPA08N50C3
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- Mfr.Part #
- SPA08N50C3
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 666
- In Stock ：
- 666
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- RoHS Compliant
- Power Dissipation :
- 32W
- Drain to Source Resistance :
- 600mOhm
- Min Operating Temperature :
- -55°C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Fall Time (Typ) :
- 7 ns
- Lead Free :
- Lead Free
- Height :
- 9.83mm
- Drain to Source Voltage (Vdss) :
- 560V
- Length :
- 10.65mm
- Polarity/Channel Type :
- N-Channel
- Number of Pins :
- 3
- Packaging :
- Bulk
- Halogen Free :
- Halogen Free
- Max Operating Temperature :
- 150°C
- Current Rating :
- 7.6A
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- Turn-Off Delay Time :
- 60 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 560V
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- Isolated
- Continuous Drain Current (ID) :
- 7.6A
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2005
- REACH SVHC :
- No SVHC
- Power Dissipation-Max :
- 32W
- Voltage - Threshold :
- 3V
- Pulsed Drain Current-Max (IDM) :
- 22.8A
- Rise Time :
- 5ns
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 560V
- Width :
- 4.85mm
- Rds On Max :
- 600 mΩ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Capacitance - Input :
- 750pF
- Terminal Form :
- THROUGH-HOLE
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-220AB
- Surface Mount :
- No
- Additional Feature :
- AVALANCHE RATED
- Pin Count :
- 3
- Number of Elements :
- 1
- Turn On Delay Time :
- 6 ns
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-220-3
- Datasheets
- SPA08N50C3
Bulk 560V TO-220-3
SPA08N50C3 Overview
This device has a continuous drain current (ID) of [7.6A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=560V, the drain-source breakdown voltage is 560V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 60 ns.A maximum pulsed drain current of 22.8A is the maximum peak drain current rated for this device.MOSFETs have 600mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 6 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 560V is needed from the drain to the source (Vdss).
SPA08N50C3 Features
a continuous drain current (ID) of 7.6A
a drain-to-source breakdown voltage of 560V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 22.8A.
single MOSFETs transistor is 600mOhm
a 560V drain to source voltage (Vdss)
SPA08N50C3 Applications
There are a lot of Infineon
SPA08N50C3 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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