SPA07N60C3XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Published :

2005

Vgs(th) (Max) @ Id :

3.9V @ 250μA

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Package / Case :

TO-220-3 Full Pack

Drain Current-Max (Abs) (ID) :

7.3A

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

600V

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Avalanche Energy Rating (Eas) :

230 mJ

Pulsed Drain Current-Max (IDM) :

21.9A

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Number of Elements :

1

Pin Count :

3

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Case Connection :

Isolated

Mounting Type :

Through Hole

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.6Ohm

Input Capacitance (Ciss) (Max) @ Vds :

790pF @ 25V

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

650V

Terminal Position :

Single

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

600m Ω @ 4.6A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

CoolMOS™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

32W Tc

JESD-609 Code :

e3