SPA06N80C3XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

CoolMOS™

Number of Terminations :

3

Power Dissipation-Max :

39W Tc

Drain-source On Resistance-Max :

0.9Ohm

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

230 mJ

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

785pF @ 100V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

6A

JEDEC-95 Code :

TO-220AB

Terminal Finish :

Tin (Sn)

Surface Mount :

No

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

900m Ω @ 3.8A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

18 Weeks

Published :

2005

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Vgs(th) (Max) @ Id :

3.9V @ 250μA

Pin Count :

3

Case Connection :

Isolated

Package / Case :

TO-220-3 Full Pack

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

JESD-30 Code :

R-PSFM-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

800V

Qualification Status :

Not Qualified

Additional Feature :

AVALANCHE RATED, HIGH VOLTAGE

Pulsed Drain Current-Max (IDM) :

18A

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

800V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single