SPA04N60C3XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Packaging :

Tube

Power Dissipation-Max :

31W Tc

Number of Terminations :

3

Case Connection :

Isolated

JESD-609 Code :

e3

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Series :

CoolMOS™

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

490pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

650V

Additional Feature :

AVALANCHE RATED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin (Sn)

Mounting Type :

Through Hole

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.95Ohm

Package / Case :

TO-220-3 Full Pack

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

3.9V @ 200µA

Pulsed Drain Current-Max (IDM) :

13.5A

Avalanche Energy Rating (Eas) :

130 mJ

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2005

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

4.5A

Rds On (Max) @ Id, Vgs :

950m Ω @ 2.8A, 10V

Factory Lead Time :

16 Weeks

DS Breakdown Voltage-Min :

600V

Reach Compliance Code :

Compliant

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Number of Elements :

1