SPA04N50C3XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

70 ns

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Rds On (Max) @ Id, Vgs :

950m Ω @ 2.8A, 10V

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Halogen Free :

Halogen Free

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Additional Feature :

AVALANCHE RATED

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Packaging :

Tube

Package / Case :

TO-220-3 Full Pack

Lead Free :

Lead Free

Fall Time (Typ) :

10 ns

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Rise Time :

5ns

Number of Pins :

3

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

4.5A

Drain-source On Resistance-Max :

0.95Ohm

Turn On Delay Time :

10 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

3.9V @ 200µA

Series :

CoolMOS™

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

ECCN Code :

EAR99

Published :

2005

Power Dissipation-Max :

31W Tc

Case Connection :

Isolated

RoHS Status :

RoHS Compliant

Max Dual Supply Voltage :

500V

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 25V

Drain to Source Voltage (Vdss) :

560V

Terminal Position :

Single

Terminal Finish :

Tin (Sn)

Power Dissipation :

31W