SPA03N60C3XKSA1

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Mfr.Part #
SPA03N60C3XKSA1
Manufacturer
Infineon Technologies
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
SPA03N60 - 600V COOLMOS N-CHANNE
Stock
14,521
In Stock :
14,521

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Breakdown Voltage :
600V
Current - Continuous Drain (Id) @ 25°C :
3.2A Tc
Halogen Free :
Halogen Free
Length :
10.36mm
Gate to Source Voltage (Vgs) :
20V
Element Configuration :
Single
JEDEC-95 Code :
TO-220AB
Package / Case :
TO-220-3 Full Pack
Fall Time (Typ) :
12 ns
Pin Count :
3
Surface Mount :
No
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
3.9V @ 135µA
Width :
4.57mm
Number of Terminations :
3
Threshold Voltage :
3V
Packaging :
Tube
Terminal Finish :
Tin (Sn)
ECCN Code :
EAR99
Rds On (Max) @ Id, Vgs :
1.4 Ω @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
3.2A
Power Dissipation :
29.7W
Pbfree Code :
yes
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~150°C TJ
Avalanche Energy Rating (Eas) :
100 mJ
Voltage - Rated DC :
650V
Power Dissipation-Max :
29.7W Tc
Height :
9.45mm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
9.6A
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
400pF @ 25V
Additional Feature :
AVALANCHE RATED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Series :
CoolMOS™
Turn On Delay Time :
7 ns
Lead Free :
Lead Free
Number of Pins :
3
Rise Time :
3ns
Published :
2005
Current Rating :
3.2A
Operating Mode :
ENHANCEMENT MODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Turn-Off Delay Time :
64 ns
Qualification Status :
Not Qualified
Number of Elements :
1
Mounting Type :
Through Hole
Case Connection :
Isolated
REACH SVHC :
No SVHC
JESD-609 Code :
e3
FET Type :
N-Channel
RoHS Status :
RoHS Compliant
Datasheets
SPA03N60C3XKSA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies SPA03N60C3XKSA1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3 Full Pack, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, SPA03N60C3XKSA1 pinout, SPA03N60C3XKSA1 datasheet PDF, SPA03N60C3XKSA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies SPA03N60C3XKSA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies SPA03N60C3XKSA1


N-Channel Tube 1.4 Ω @ 2A, 10V ±20V 400pF @ 25V 17nC @ 10V TO-220-3 Full Pack

SPA03N60C3XKSA1 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 100 mJ.A device's maximum input capacitance is 400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3.2A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 64 ns.Its maximum pulsed drain current is 9.6A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 3V.This device uses no drive voltage (10V) to reduce its overall power consumption.

SPA03N60C3XKSA1 Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 3.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 64 ns
based on its rated peak drain current 9.6A.
a threshold voltage of 3V


SPA03N60C3XKSA1 Applications


There are a lot of Infineon Technologies
SPA03N60C3XKSA1 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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