SN7002WH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Mount :

Surface Mount

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

3

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

FET Type :

N-Channel

Power Dissipation-Max :

500mW Ta

Radiation Hardening :

No

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

230mA Ta

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

45pF @ 25V

Max Dual Supply Voltage :

60V

Width :

1.25mm

Vgs(th) (Max) @ Id :

1.8V @ 26μA

Turn-Off Delay Time :

6 ns

Package / Case :

SC-70, SOT-323

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

5Ohm

Number of Channels :

1

Height :

800μm

Vgs (Max) :

±20V

Rise Time :

2.8ns

Rds On (Max) @ Id, Vgs :

5 Ω @ 230mA, 10V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

500mW

Feedback Cap-Max (Crss) :

4.5 pF

Factory Lead Time :

10 Weeks

Turn On Delay Time :

2.4 ns

Packaging :

Cut Tape (CT)

Length :

2mm

Continuous Drain Current (ID) :

230mA

Series :

SIPMOS®

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 10V

Halogen Free :

Halogen Free

Terminal Finish :

Tin (Sn)

Published :

1996

Number of Elements :

1

Drain to Source Breakdown Voltage :

60V

Fall Time (Typ) :

8.5 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual