SN7002NH6433XTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

5Ohm

Turn On Delay Time :

2.4 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Dual

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Drain to Source Voltage (Vdss) :

60V

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

5.3 ns

Mounting Type :

Surface Mount

Power Dissipation-Max :

360mW Ta

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Additional Feature :

LOGIC LEVEL COMPATIBLE

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

45pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Packaging :

Tape and Reel (TR)

Factory Lead Time :

10 Weeks

DS Breakdown Voltage-Min :

60V

Number of Pins :

3

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

1.8V @ 26μA

Number of Elements :

1

Package / Case :

TO-236-3, SC-59, SOT-23-3

Published :

2003

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 10V

Fall Time (Typ) :

3.6 ns

Series :

SIPMOS™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

0.2A

Continuous Drain Current (ID) :

200mA

Feedback Cap-Max (Crss) :

4.2 pF

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

3.2ns

FET Type :

N-Channel