SMMBTA64LT1G
- Mfr.Part #
- SMMBTA64LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 0.5A SOT23-3
- Stock
- 2,046
- In Stock :
- 2,046
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- MMBTA64
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Transition Frequency :
- 125MHz
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Factory Lead Time :
- 7 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Surface Mount :
- yes
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 1.5V
- Mounting Type :
- Surface Mount
- Frequency - Transition :
- 125MHz
- Power - Max :
- 225mW
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Terminal Form :
- Gull wing
- Halogen Free :
- Halogen Free
- Max Power Dissipation :
- 225mW
- Published :
- 2008
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- PNP - Darlington
- Collector Base Voltage (VCBO) :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Polarity :
- PNP
- Collector Emitter Voltage (VCEO) :
- 30V
- Max Collector Current :
- 500mA
- Collector Emitter Breakdown Voltage :
- 30V
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- SMMBTA64LT1G

PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SMMBTA64LT1G Overview
DC current gain in this device equals 20000 @ 100mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 100μA, 100mA.An emitter's base voltage can be kept at 10V to gain high efficiency.As a result, the part has a transition frequency of 125MHz.In extreme cases, the collector current can be as low as 500mA volts.
SMMBTA64LT1G Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 125MHz
SMMBTA64LT1G Applications
There are a lot of ON Semiconductor
SMMBTA64LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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