SMMBTA64LT1G

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Mfr.Part #
SMMBTA64LT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP DARL 30V 0.5A SOT23-3
Stock
2,046
In Stock :
2,046

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Base Part Number :
MMBTA64
Element Configuration :
Single
JESD-609 Code :
e3
Transition Frequency :
125MHz
Pbfree Code :
yes
Radiation Hardening :
No
Factory Lead Time :
7 Weeks
DC Current Gain (hFE) (Min) @ Ic, Vce :
20000 @ 100mA 5V
Surface Mount :
yes
Pin Count :
3
Transistor Element Material :
SILICON
Packaging :
Tape and Reel (TR)
Collector Emitter Saturation Voltage :
1.5V
Mounting Type :
Surface Mount
Frequency - Transition :
125MHz
Power - Max :
225mW
Number of Terminations :
3
Terminal Position :
Dual
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Terminal Form :
Gull wing
Halogen Free :
Halogen Free
Max Power Dissipation :
225mW
Published :
2008
Terminal Finish :
Tin (Sn)
Number of Elements :
1
Package / Case :
TO-236-3, SC-59, SOT-23-3
Transistor Type :
PNP - Darlington
Collector Base Voltage (VCBO) :
30V
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max) :
100nA ICBO
Lead Free :
Lead Free
Operating Temperature :
-55°C~150°C TJ
Polarity :
PNP
Collector Emitter Voltage (VCEO) :
30V
Max Collector Current :
500mA
Collector Emitter Breakdown Voltage :
30V
Number of Pins :
3
ECCN Code :
EAR99
Emitter Base Voltage (VEBO) :
10V
RoHS Status :
ROHS3 Compliant
Datasheets
SMMBTA64LT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi SMMBTA64LT1G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MMBTA64, Mounting Type:Surface Mount, Number of Terminations:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, SMMBTA64LT1G pinout, SMMBTA64LT1G datasheet PDF, SMMBTA64LT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi SMMBTA64LT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SMMBTA64LT1G


PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

SMMBTA64LT1G Overview


DC current gain in this device equals 20000 @ 100mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 100μA, 100mA.An emitter's base voltage can be kept at 10V to gain high efficiency.As a result, the part has a transition frequency of 125MHz.In extreme cases, the collector current can be as low as 500mA volts.

SMMBTA64LT1G Features


the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 125MHz


SMMBTA64LT1G Applications


There are a lot of ON Semiconductor
SMMBTA64LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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