SMMBTA56LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

-250mV

Collector Emitter Voltage (VCEO) :

80V

Transistor Type :

PNP

Number of Elements :

1

Max Power Dissipation :

225mW

Lead Free :

Lead Free

Base Part Number :

MMBTA56

Power - Max :

225mW

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Element Configuration :

Single

Number of Terminations :

3

Transistor Element Material :

SILICON

Terminal Position :

Dual

Transistor Application :

AMPLIFIER

Collector Base Voltage (VCBO) :

80V

Factory Lead Time :

5 Weeks

Current - Collector Cutoff (Max) :

100nA

Max Collector Current :

500mA

Published :

2011

Number of Pins :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Length :

3.04mm

Height :

1.11mm

Transition Frequency :

50MHz

Gain Bandwidth Product :

50MHz

Power Dissipation :

300mW

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

80V

hFE Min :

100

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

4V

Width :

2.64mm

Contact Plating :

Tin

Frequency :

50MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Pbfree Code :

yes

Pin Count :

3

Polarity/Channel Type :

PNP

Max Breakdown Voltage :

80V

Surface Mount :

yes

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)