SMMBTA13LT1G
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- Mfr.Part #
- SMMBTA13LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 0.3A SOT23-3
- Stock
- 20,729
- In Stock ：
- 20,729
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Halogen Free :
- Halogen Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 1.4mm
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Max Power Dissipation :
- 225mW
- Length :
- 3.04mm
- Collector Emitter Saturation Voltage :
- 1.5V
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 30V
- Emitter Base Voltage (VEBO) :
- 10V
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1.01mm
- Factory Lead Time :
- 8 Weeks
- Frequency - Transition :
- 125MHz
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Max Collector Current :
- 300mA
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power - Max :
- 225mW
- Collector Emitter Voltage (VCEO) :
- 30V
- Collector Base Voltage (VCBO) :
- 30V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Base Part Number :
- MMBTA13
- Polarity :
- NPN
- Pin Count :
- 3
- Pbfree Code :
- yes
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transition Frequency :
- 125MHz
- Published :
- 2009
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Transistor Type :
- NPN - Darlington
- Datasheets
- SMMBTA13LT1G
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SMMBTA13LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Parts of this part have transition frequencies of 125MHz.During maximum operation, collector current can be as low as 300mA volts.
SMMBTA13LT1G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 125MHz
SMMBTA13LT1G Applications
There are a lot of ON Semiconductor
SMMBTA13LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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