SMMBT5551LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Tape and Reel (TR)

Transistor Type :

NPN

Mounting Type :

Surface Mount

Polarity/Channel Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reference Standard :

AEC-Q101

Package / Case :

TO-236-3, SC-59, SOT-23-3

Surface Mount :

yes

Collector Emitter Breakdown Voltage :

160V

ECCN Code :

EAR99

Terminal Position :

Dual

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Max Power Dissipation :

225mW

Number of Terminations :

3

Number of Pins :

3

Power - Max :

225mW

Collector Emitter Voltage (VCEO) :

200mV

Transistor Application :

SWITCHING

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

100nA

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Factory Lead Time :

4 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Configuration :

Single

Collector Base Voltage (VCBO) :

180V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Pin Count :

3

VCEsat-Max :

0.2 V

RoHS Status :

ROHS3 Compliant

Max Collector Current :

600mA

Terminal Form :

Gull wing

Published :

2008