SMMBT5401LT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

150V

Max Breakdown Voltage :

150V

Surface Mount :

yes

Transition Frequency :

100MHz

Current - Collector Cutoff (Max) :

50nA ICBO

Contact Plating :

Tin

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Published :

2014

Transistor Element Material :

SILICON

Pin Count :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 5V

Gain Bandwidth Product :

100MHz

Transistor Type :

PNP

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Breakdown Voltage :

150V

Power Dissipation :

300mW

Max Power Dissipation :

300mW

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual

Width :

1.4mm

Frequency :

300MHz

Number of Elements :

1

Base Part Number :

MMBT5401

hFE Min :

60

Length :

3.04mm

Element Configuration :

Single

Factory Lead Time :

8 Weeks

Height :

1.01mm

Collector Emitter Saturation Voltage :

-200mV

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Max Collector Current :

500mA

Pbfree Code :

yes

Number of Pins :

3

Polarity/Channel Type :

PNP

Collector Base Voltage (VCBO) :

160V

Emitter Base Voltage (VEBO) :

5V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Radiation Hardening :

No