SMMBT2369LT1G

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Mfr.Part #
SMMBT2369LT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 15V 0.2A SOT23-3
Stock
1,062
In Stock :
1,062

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-609 Code :
e3
Pin Count :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 10mA 1V
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Number of Elements :
1
Number of Pins :
3
Collector Emitter Voltage (VCEO) :
250mV
Current - Collector Cutoff (Max) :
400nA
Factory Lead Time :
2 Weeks
Package / Case :
TO-236-3, SC-59, SOT-23-3
ECCN Code :
EAR99
Vce Saturation (Max) @ Ib, Ic :
250mV @ 1mA, 10mA
Power - Max :
225mW
Transistor Application :
SWITCHING
Polarity/Channel Type :
NPN
Published :
2009
Number of Terminations :
3
Configuration :
Single
Terminal Finish :
Tin (Sn)
Transistor Element Material :
SILICON
Surface Mount :
yes
Terminal Position :
Dual
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Breakdown Voltage :
15V
Terminal Form :
Gull wing
Operating Temperature :
-55°C~150°C TJ
Max Power Dissipation :
225mW
Turn Off Time-Max (toff) :
18ns
RoHS Status :
ROHS3 Compliant
Packaging :
Tape and Reel (TR)
Collector Base Voltage (VCBO) :
40V
Transistor Type :
NPN
Reference Standard :
AEC-Q101
Max Collector Current :
200mA
Lead Free :
Lead Free
Pbfree Code :
yes
Radiation Hardening :
No
Mounting Type :
Surface Mount
Turn On Time-Max (ton) :
12ns
Datasheets
SMMBT2369LT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi SMMBT2369LT1G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, SMMBT2369LT1G pinout, SMMBT2369LT1G datasheet PDF, SMMBT2369LT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi SMMBT2369LT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SMMBT2369LT1G


NPN -55°C~150°C TJ 400nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

SMMBT2369LT1G Overview


In this device, the DC current gain is 40 @ 10mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 1mA, 10mA.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.

SMMBT2369LT1G Features


the DC current gain for this device is 40 @ 10mA 1V
the vce saturation(Max) is 250mV @ 1mA, 10mA


SMMBT2369LT1G Applications


There are a lot of ON Semiconductor
SMMBT2369LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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