SMMBT2369LT1G
- Mfr.Part #
- SMMBT2369LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.2A SOT23-3
- Stock
- 1,062
- In Stock :
- 1,062
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 10mA 1V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Number of Elements :
- 1
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 250mV
- Current - Collector Cutoff (Max) :
- 400nA
- Factory Lead Time :
- 2 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 1mA, 10mA
- Power - Max :
- 225mW
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Published :
- 2009
- Number of Terminations :
- 3
- Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Surface Mount :
- yes
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 15V
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 225mW
- Turn Off Time-Max (toff) :
- 18ns
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 40V
- Transistor Type :
- NPN
- Reference Standard :
- AEC-Q101
- Max Collector Current :
- 200mA
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Turn On Time-Max (ton) :
- 12ns
- Datasheets
- SMMBT2369LT1G

NPN -55°C~150°C TJ 400nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SMMBT2369LT1G Overview
In this device, the DC current gain is 40 @ 10mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 1mA, 10mA.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
SMMBT2369LT1G Features
the DC current gain for this device is 40 @ 10mA 1V
the vce saturation(Max) is 250mV @ 1mA, 10mA
SMMBT2369LT1G Applications
There are a lot of ON Semiconductor
SMMBT2369LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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