SMMBT2222ALT3G

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Mfr.Part #
SMMBT2222ALT3G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 40V 0.6A SOT23-3
Stock
16,753
In Stock :
16,753

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
hFE Min :
40
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gain Bandwidth Product :
300MHz
Vce Saturation (Max) @ Ib, Ic :
1V @ 50mA, 500mA
Number of Terminations :
3
Collector Emitter Voltage (VCEO) :
40V
Factory Lead Time :
10 Weeks
Frequency :
300MHz
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Transistor Type :
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 10V
Radiation Hardening :
No
Surface Mount :
yes
Max Power Dissipation :
300mW
Terminal Finish :
Tin (Sn)
Pbfree Code :
yes
Transition Frequency :
300MHz
Package / Case :
TO-236-3, SC-59, SOT-23-3
Base Part Number :
MMBT2222A
Max Collector Current :
1.1A
Collector Base Voltage (VCBO) :
75V
Lead Free :
Lead Free
ECCN Code :
EAR99
Pin Count :
3
Collector Emitter Saturation Voltage :
1V
JESD-609 Code :
e3
Number of Elements :
1
Power Dissipation :
300mW
Current - Collector Cutoff (Max) :
10nA ICBO
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Published :
2009
Mounting Type :
Surface Mount
Packaging :
Tape and Reel (TR)
Turn Off Time-Max (toff) :
285ns
Current - Collector (Ic) (Max) :
600mA
Transistor Element Material :
SILICON
Terminal Position :
Dual
Operating Temperature :
-55°C~150°C TJ
Peak Reflow Temperature (Cel) :
260
Terminal Form :
Gull wing
Number of Pins :
3
Polarity/Channel Type :
NPN
Emitter Base Voltage (VEBO) :
6V
Datasheets
SMMBT2222ALT3G
Introducing Transistors - Bipolar (BJT) - Single onsemi SMMBT2222ALT3G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Base Part Number:MMBT2222A, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, SMMBT2222ALT3G pinout, SMMBT2222ALT3G datasheet PDF, SMMBT2222ALT3G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi SMMBT2222ALT3G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SMMBT2222ALT3G


NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

SMMBT2222ALT3G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 300MHz.Single BJT transistor is possible to have a collector current as low as 1.1A volts at Single BJT transistors maximum.

SMMBT2222ALT3G Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz


SMMBT2222ALT3G Applications


There are a lot of ON Semiconductor
SMMBT2222ALT3G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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