SMMBT2222ALT3G
- Mfr.Part #
- SMMBT2222ALT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SOT23-3
- Stock
- 16,753
- In Stock :
- 16,753
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 300MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 40V
- Factory Lead Time :
- 10 Weeks
- Frequency :
- 300MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Radiation Hardening :
- No
- Surface Mount :
- yes
- Max Power Dissipation :
- 300mW
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Transition Frequency :
- 300MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Base Part Number :
- MMBT2222A
- Max Collector Current :
- 1.1A
- Collector Base Voltage (VCBO) :
- 75V
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 1V
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Power Dissipation :
- 300mW
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2009
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Turn Off Time-Max (toff) :
- 285ns
- Current - Collector (Ic) (Max) :
- 600mA
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- SMMBT2222ALT3G

NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SMMBT2222ALT3G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 300MHz.Single BJT transistor is possible to have a collector current as low as 1.1A volts at Single BJT transistors maximum.
SMMBT2222ALT3G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
SMMBT2222ALT3G Applications
There are a lot of ON Semiconductor
SMMBT2222ALT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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