SMMBFJ310LT3G

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Mfr.Part #
SMMBFJ310LT3G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
RF MOSFET N-CH JFET 10V SOT23
Stock
20,989
In Stock :
20,989

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - RF
Transistor Type :
N-Channel JFET
Voltage - Test :
10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max (Abs) :
0.225W
Base Part Number :
MMBFJ310
RoHS Status :
ROHS3 Compliant
Max Operating Temperature :
150°C
Surface Mount :
yes
Current Rating (Amps) :
60mA
Factory Lead Time :
8 Weeks
Number of Pins :
3
Lead Free :
Lead Free
JESD-609 Code :
e3
FET Technology :
JUNCTION
Published :
2009
Pin Count :
3
Pbfree Code :
yes
Element Configuration :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Test :
10mA
Packaging :
Tape and Reel (TR)
Min Operating Temperature :
-55°C
Halogen Free :
Halogen Free
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package / Case :
TO-236-3, SC-59, SOT-23-3
Series :
Automotive, AEC-Q101
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Gain :
12dB
Gate to Source Voltage (Vgs) :
25V
Terminal Finish :
Tin (Sn)
ECCN Code :
EAR99
Datasheets
SMMBFJ310LT3G
Introducing Transistors - FETs, MOSFETs - RF onsemi SMMBFJ310LT3G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MMBFJ310, Number of Pins:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Gain:12dB, SMMBFJ310LT3G pinout, SMMBFJ310LT3G datasheet PDF, SMMBFJ310LT3G amp .Beyond Transistors - FETs, MOSFETs - RF onsemi SMMBFJ310LT3G ,we also offer BLF174XR,112, BLF2425M9L30U, BLF183XRU, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SMMBFJ310LT3G


SMMBFJ310LT3G datasheet pdf and Transistors - FETs, MOSFETs - RF product details from ON Semiconductor stock available at

The ON Semiconductor SMMBFJ310LT3G is a N-Channel JFET transistor in a 3-pin SOT-23 package. It has a maximum drain-source voltage of 25V and a maximum drain current of 200mA. This transistor is designed for use in RF applications such as amplifiers, switches, and oscillators. It features low noise, low input capacitance, and low gate-source capacitance. It also has a high input impedance and a low gate-source leakage current. This transistor is suitable for use in a wide range of applications, including automotive, consumer electronics, and industrial applications.
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