SMMBFJ310LT1G

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Mfr.Part #
SMMBFJ310LT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
RF MOSFET N-CH JFET 10V SOT23
Stock
10,531
In Stock :
10,531

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - RF
Published :
2006
Contact Plating :
Tin
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Voltage - Test :
10V
FET Technology :
JUNCTION
Power Dissipation-Max (Abs) :
0.225W
Halogen Free :
Halogen Free
Max Operating Temperature :
150°C
Gain :
12dB
JESD-609 Code :
e3
ECCN Code :
EAR99
Factory Lead Time :
8 Weeks
Surface Mount :
yes
Transistor Type :
N-Channel JFET
Gate to Source Voltage (Vgs) :
25V
Number of Pins :
3
Current Rating (Amps) :
60mA
Series :
Automotive, AEC-Q101
Lead Free :
Lead Free
Pbfree Code :
yes
Min Operating Temperature :
-55°C
Base Part Number :
MMBFJ310
Current - Test :
10mA
Packaging :
Tape and Reel (TR)
Package / Case :
TO-236-3, SC-59, SOT-23-3
RoHS Status :
ROHS3 Compliant
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Element Configuration :
Single
Pin Count :
3
Datasheets
SMMBFJ310LT1G
Introducing Transistors - FETs, MOSFETs - RF onsemi SMMBFJ310LT1G from Chip IC,where excellence meets affordability. This product stands out with its Gain:12dB, Number of Pins:3, Base Part Number:MMBFJ310, Package / Case:TO-236-3, SC-59, SOT-23-3, SMMBFJ310LT1G pinout, SMMBFJ310LT1G datasheet PDF, SMMBFJ310LT1G amp .Beyond Transistors - FETs, MOSFETs - RF onsemi SMMBFJ310LT1G ,we also offer BLF174XR,112, BLF2425M9L30U, BLF183XRU, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SMMBFJ310LT1G


SMMBFJ310LT1G datasheet pdf and Transistors - FETs, MOSFETs - RF product details from ON Semiconductor stock available at

ON Semiconductor's FETs, MOSFETs, and RF SMMBFJ310LT1G are transistors designed for use in a variety of applications. This particular device is a JFET N-Channel transistor with a maximum drain-source voltage of 25V and a maximum drain current of 10mA. It is packaged in a SOT23 package, making it suitable for use in a variety of applications.

The features of this device include low input capacitance, low noise, and low input bias current. It also has a high input impedance and a low gate-source capacitance. This makes it suitable for use in a variety of applications, such as amplifiers, switches, and signal processing.

The applications of this device include RF amplifiers, RF switches, and signal processing. It can also be used in audio amplifiers, power amplifiers, and other applications that require low noise and low input bias current. It is also suitable for use in low-power applications, such as battery-powered devices.
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