SMBTA06E6327HTSA1
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- Mfr.Part #
- SMBTA06E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- AF TRANSISTORS
- Stock
- 59,280
- In Stock ：
- 59,280
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- 150°C TJ
- Current Rating :
- 500mA
- hFE Min :
- 100
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Frequency :
- 100MHz
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- 80V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 100nA
- Published :
- 2011
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Transition Frequency :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 80V
- Base Part Number :
- MBTA06
- Power Dissipation :
- 330mW
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Type :
- NPN
- Factory Lead Time :
- 26 Weeks
- Max Breakdown Voltage :
- 80V
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Halogen Free :
- Not Halogen Free
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 4V
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 250mV
- Configuration :
- Single
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 330mW
- Max Collector Current :
- 500mA
- Polarity/Channel Type :
- NPN
- Datasheets
- SMBTA06E6327HTSA1
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SMBTA06E6327HTSA1 Overview
DC current gain in this device equals 100 @ 100mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 100mA.An emitter's base voltage can be kept at 4V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 500mA volts.
SMBTA06E6327HTSA1 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
SMBTA06E6327HTSA1 Applications
There are a lot of Infineon Technologies
SMBTA06E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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