SIR330DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

PowerPAK® SO-8

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Published :

2016

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Power Dissipation-Max :

5W Ta 27.7W Tc

Continuous Drain Current (ID) :

35A

Number of Channels :

1

Drain to Source Breakdown Voltage :

30V

Pulsed Drain Current-Max (IDM) :

70A

JESD-609 Code :

e3

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

JESD-30 Code :

R-PDSO-C5

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

C BEND

Pin Count :

8

Transistor Application :

SWITCHING

Weight :

506.605978mg

FET Type :

N-Channel

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 10A, 10V

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

20 mJ

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.0056Ohm

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Terminal Finish :

MATTE TIN

Number of Terminations :

5

Vgs (Max) :

±20V

Number of Elements :

1

Series :

TrenchFET®