SIR172DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Nominal Vgs :

2.5 V

Terminal Form :

C BEND

Rds On (Max) @ Id, Vgs :

8.9m Ω @ 16.1A, 10V

Turn On Delay Time :

19 ns

Pulsed Drain Current-Max (IDM) :

50A

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

997pF @ 15V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Radiation Hardening :

No

Number of Channels :

1

Avalanche Energy Rating (Eas) :

22 mJ

Time@Peak Reflow Temperature-Max (s) :

40

Weight :

506.605978mg

Drain to Source Voltage (Vdss) :

30V

Series :

TrenchFET®

REACH SVHC :

Unknown

Resistance :

12.4mOhm

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Pin Count :

8

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Turn-Off Delay Time :

19 ns

Published :

2013

Factory Lead Time :

12 Weeks

Power Dissipation :

3.9W

JESD-609 Code :

e3

JESD-30 Code :

R-XDSO-C5

Terminal Finish :

Matte Tin (Sn)

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Transistor Application :

SWITCHING

Number of Pins :

8

Mounting Type :

Surface Mount

Number of Terminations :

5

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

20A

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

PowerPAK® SO-8

Element Configuration :

Single

Vgs (Max) :

±20V

Fall Time (Typ) :

13 ns

DS Breakdown Voltage-Min :

30V

Power Dissipation-Max :

29.8W Tc

Case Connection :

DRAIN

Pbfree Code :

yes

Rise Time :

19ns

Threshold Voltage :

2.5V

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual