SIR166DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

77nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Threshold Voltage :

1.2V

Package / Case :

PowerPAK® SO-8

Input Capacitance (Ciss) (Max) @ Vds :

3340pF @ 15V

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

40A

Terminal Finish :

MATTE TIN

Element Configuration :

Single

Turn-Off Delay Time :

44 ns

Case Connection :

DRAIN

Nominal Vgs :

1.2 V

Turn On Delay Time :

28 ns

JESD-30 Code :

R-XDSO-C5

Power Dissipation-Max :

5W Ta 48W Tc

Number of Pins :

8

ECCN Code :

EAR99

REACH SVHC :

Unknown

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

C BEND

Factory Lead Time :

14 Weeks

Resistance :

4mOhm

Mounting Type :

Surface Mount

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

506.605978mg

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

70A

Lead Free :

Lead Free

Pin Count :

8

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Power Dissipation :

5W

Series :

TrenchFET®

JESD-609 Code :

e3

Terminal Position :

Dual

Published :

2010

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Drain to Source Breakdown Voltage :

30V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 15A, 10V

Peak Reflow Temperature (Cel) :

260

Number of Channels :

1

Rise Time :

21ns

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

5

Fall Time (Typ) :

16 ns

Vgs (Max) :

±20V

Number of Elements :

1

Radiation Hardening :

No